DMT10H015LFG-7

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:	33.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:	13.5mOhm @ 20A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	100 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	1871 pF @ 50 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	POWERDI3333-8
Mfr:	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:	10A (Ta), 42A (Tc)
Power Dissipation (Max):	2W (Ta), 35W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	DMT10
Description:	MOSFET N-CH 100V PWRDI3333

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 100 V 10A (Ta), 42A (Tc) 2W (Ta), 35W (Tc) Surface Mount POWERDI3333-8

Product Tags:

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