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6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

Categories Semiconductor Substrate
Brand Name: ZMKJ
Model Number: 2inch AlN-sapphire
Place of Origin: China
MOQ: 5pcs
Price: by case
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
Delivery Time: in 30days
Packaging Details: single wafer container in cleaning room
substrate: sapphire wafer
layer: AlN template
layer thickness: 1-5um
conductivity type: N/P
Orientation: 0001
application: high power/high frequency electronic devices
application 2: 5G saw/BAW Devices
silicon thickness: 525um/625um/725um
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6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer


Applications of AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).
Specification
Characteristic Specification

Other relaterd 4INCH GaN Template Specification


GaN/ Al₂O₃ Substrates (4") 4inch
ItemUn-dopedN-type

High-doped

N-type

Size (mm)Φ100.0±0.5 (4")
Substrate StructureGaN on Sapphire(0001)
SurfaceFinished(Standard: SSP Option: DSP)
Thickness (μm)4.5±0.5; 20±2;Customized
Conduction TypeUn-dopedN-typeHigh-doped N-type
Resistivity (Ω·cm)(300K)≤0.5≤0.05≤0.01
GaN Thickness Uniformity
≤±10% (4")
Dislocation Density (cm-2)
≤5×108
Useable Surface Area>90%
PackagePackaged in a class 100 clean room environment.

Crystal structure

Wurtzite

Lattice constant (Å)a=3.112, c=4.982
Conduction band typeDirect bandgap
Density (g/cm3)3.23
Surface microhardness (Knoop test)800
Melting point (℃)2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)320
Band gap energy (eV)6.28
Electron mobility (V·s/cm2)1100
Electric breakdown field (MV/cm)11.7

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