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| Categories | Silicon Carbide Wafer |
|---|---|
| Brand Name: | ZMKJ |
| Model Number: | customzied size |
| Place of Origin: | CHINA |
| MOQ: | 1pcs |
| Price: | 600-1500usd/pcs by FOB |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
| Delivery Time: | 1-6weeks |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Material: | SiC single crystal 4H-N type |
| Grade: | Dummy / research /Production grade |
| Thicnkss: | 4 customized |
| Suraface: | LP/LP or as-cut |
| Application: | device maker polishing test |
| Diameter: | 150±0.5mm |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
| 4 inch Conductive SiC Wafer Specification | ||||
| Product | 4H-SiC | |||
| Grade | Grade I | Grade II | Grade III | |
| polycrystalline areas | None permitted | None permitted | <5% | |
| polytype areas | None permitted | ≤20% | 20% ~ 50% | |
| Micropipe Density) | < 5micropipes/cm-2 | < 30micropipes/cm-2 | <100micropipes/cm-2 | |
| Total usable area | >95% | >80% | N/A | |
| Diameter | 100.0 mm +0/-0.5 mm | |||
| Thickness | 500 μm ± 25 μm or Customer Specification | |||
| Dopant | n type: nitrogen | |||
| Primary Flat Orientation) | Perpendicular to <11-20> ± 5.0° | |||
| Primary Flat Length | 32.5 mm ± 2.0 mm | |||
| Secondary Flat Orientation) | 90° CW from Primary flat ± 5.0° | |||
| Secondary Flat Length) | 18.0 mm ± 2.0 mm | |||
| On axis Wafer Orientation) | {0001} ± 0.25° | |||
| Off axis Wafer Orientation | 4.0° toward <11-20> ± 0.5° or Customer Specification | |||
| TTV/BOW/Warp | < 5μm / <10μm /< 20μm | |||
| Resistivity | 0.01~0.03 Ω×cm | |||
| Surface Finish | C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification | Double side polish | ||
4H-N Type / High Purity SiC wafer 2 inch 4H N-Type SiC wafer 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer |
The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.
During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.
Service
We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.
we are at your side by any time when you have problem,and resolve it in 10hours.
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