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| Categories | General Purpose Rectifier Diode |
|---|---|
| Brand Name: | VISHAY |
| Model Number: | IRFP9240 |
| Place of Origin: | CHINA |
| MOQ: | 10 PCS |
| Price: | Negotiation |
| Payment Terms: | T/T, Western Union ， ESCROW |
| Supply Ability: | 10000PCS |
| Delivery Time: | STOCK |
| Packaging Details: | TUBE |
| Categories: | Transistors - FETs, MOSFETs - Single |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Power Dissipation (Max): | 150W (Tc) |
IRFP9240 General Purpose Rectifier Diode P-Channel 200V 12A (Tc) 150W (Tc) Through Hole
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness. The TO-247AC
package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218 package
because of its isolated mounting hole. It also provides greater
creepage distance between pins to meet the requirements of most
safety specifications.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
|
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