bll1214 250 power mosfet

Brand Name:Infineon

Model Number:IRFP240

Place of Origin:China

...MOSFET 200V Vdss 20A Id 0.18Ohm Rds(on) fast switching TO-247 package reliable for audio and power Features N-Channel Enhancement Mode – Standard positive gate drive, easy to use in common circuit topologies. 200V Drain-Source Voltage (Vdss) – Supports 100V–150V rail voltages in audio and switching power supplies. 20A Continuous Drain Current (Id) – Capable of handling moderate to high power...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 12dB 250W SOT502A

Model Number:BLL1214-250,112

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 12dB 250W SOT502A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 12dB 250W SOT502A

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMJS1D6N06CL

High Power MOSFET NVMJS1D6N06CL Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ...

Brand Name:TOSHIBA

Model Number:2SC5200-O

Place of Origin:Original

...POWER AMPLIFIER APPLICATIONS high power mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE 15+ QFP ME0550-02DA 595 IXYS 14+ IGBT MDD26-14N1B 5902 IXYS 16+ IGBT MT9V024IA7XTM 2499 ON 15+ BGA MCC21-1408B 4756 IXYS 14+ IGBT CM100DU-24NFH 378 MITSUBI 15+ MODULE 6RI100E-080 958 FUJI 15+ MODULE PM150RSD060 250...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Model Number:IXFX27N80Q

Place of Origin:original factory

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:ON

Model Number:FQA40N25

Place of Origin:original

FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series ...

Brand Name:JIATUO CHINA

Model Number:JTPP-90

Place of Origin:CHINA

...Power Pp Strapping Band Making Machine With PLC Control Technical Parameters of PP strap production line Type JTPP-90 JTPP-100 JTPP-110 JTPP-125 JTPP-135 JTPP-90/65 JTPP110/75 Strap of number 2 3 4 6 8 2 4 Sandwich belt Sandwich belt width 5-19mm 5-19mm 5-19mm 9-19mm 9-19mm 9-19mm 9-19mm Thickness 0.4-1.2mm Reducer mode 200 200 225 250...

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Brand Name:Hongtai，Midea

Place of Origin:China

...capabilities. With capacities ranging from 2.2-14kW and a compact 299mm profile, this unit delivers powerful performance while minimizing ceiling space requirements. Key Features 250-400Pa Ultra-High Static Pressure: Achieves static pressure up to 250Pa (5

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:SHENGRUI

Model Number:1010000101250112110120

Place of Origin:China

...250 series quick-connect male tab terminal is designed for fast and reliable wire connection. With 6.3×0.8mm standard size and anti-tilt PCB mounting structure, it provides strong stability during soldering and long-term use. It is fully interchangeable with TE and Molex equivalent terminals, no need to change PCB design or assembly tooling. Suitable for power...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...