blf7g22l 130 mosfet transistor

Model Number:BLF7G22L-130,112

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF7G22L-130,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Place of Origin:Original

BLF7G22L-130,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.11GHz ~ 2.17GHz Gain 18.5dB Voltage - Test 28V Current Rating 28A Noise Figure - Current - Test 950mA Power - Output 30W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF7G22L-130...

Place of Origin:PHILIPPINE

Model Number:BLF7G22L-130

BLF7G22L-130 is a Power LDMOS transistor. Part NO: BLF7G22L-130 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in ...

Model Number:BLF7G22L-130,112

RF Mosfet 28 V 950 mA 2.11GHz ~ 2.17GHz 18.5dB 30W SOT502A

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 950 mA 2.11GHz ~ 2.17GHz 18.5dB 30W SOT502A

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

...Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous(Note 2) 50 A IDM Drain Current-Single Plused(Note 1) 200 A PD Power Dissipation (Note 2) 130...

Model Number:BLF7G22L-130,118

RF Mosfet 28 V 950 mA 2.11GHz ~ 2.17GHz 18.5dB 30W SOT502A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 950 mA 2.11GHz ~ 2.17GHz 18.5dB 30W SOT502A

Brand Name:IRF

Model Number:IRLB4030PBF

Place of Origin:original

IRLB4030PBF HEXFET general Power Mosfet Transistor 130 A Continuous Drain Current Applications ►DC Motor Drive ►High Efficiency Synchronous Rectification in SMPS ►Uninterruptible Power Supply ►...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original

Model Number:STD12N10L

... with STD12N10L MOSFET Transistors Pros and Cons of using STD12N10L MOSFET Transistors As a seeker of powerful performance from your electronic devices, you’ve likely come across the STD12N10L MOSFET Transistors. These transistor components are renowned...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...