blf6g27 100 power mosfet

Model Number:BLF6G27-100,118

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27-100,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Place of Origin:Original

BLF6G27-100,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency - Gain - Voltage - Test 28V Current Rating 29A Noise Figure - Current - Test 900mA Power - Output 14W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G27-100...

Model Number:BLF6G27-100,118

RF Mosfet 28 V 900 mA 14W SOT502A

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 900 mA 14W SOT502A

Place of Origin:China

Brand Name:ONSEMI

Model Number:FQD19N10L

High Power MOSFET FQD19N10L N-Channel Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Model Number:BLF6G27-100,112

RF Mosfet 28 V 900 mA 14W SOT502A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 900 mA 14W SOT502A

Brand Name:Anterwell

Model Number:IRL3713PBF

Place of Origin:original factory

... IRL3713SPbF IRL3713LPbF HEXFET Power MOSFET SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100% RG Tested Lead-...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:ON

Model Number:NTD6416ANLT4G

Place of Origin:original

NTD6416ANLT4G Chipscomponent Electronic Components IC Chips' NTD6416ANLT4G High Power MOSFET electronic chip brand new original TO-252-2(DPAK) Surface mount type N channel 100 V 19A (Tc) 71W (Tc) DPAK Category Integrated Circuits (ICs) Mfr Analog ...

Model Number:SIR668ADP-T1-RE3

...optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control,

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:onsemi

Model Number:FDS3692

Place of Origin:original

FDS3692 N-Channel Power MOSFET for High Frequency High Efficiency Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max ...

Brand Name:VISHAY

Model Number:SI7336ADP-T1-E3

Place of Origin:Original

... MOSFET FEATURES • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology •Qg Optimized • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • 100 % ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:Original Factory

Model Number:IPD068N10N3GATMA1

Place of Origin:CN

...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:Infineon

Model Number:BSC070N10NS3GATMA1

Place of Origin:Malaysia

..., high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Potential Applications: ...