blf6g20ls 75 118 rf power transistor

Model Number:BLF6G20LS-75,118

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G20LS-75,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:Silicon Labs

Model Number:SI4438-B1C-FMR

Place of Origin:Multi-origin

SI4438-B1C-FMR RF Power Transistor Product Overview: The SI4438-B1C-FMR is a high-performance RF power transistor designed for use in a wide range of applications, including base stations, portable radios, and broadband amplifiers. Featuring a high gain...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Model Number:BLF6G20LS-75,118

RF Mosfet 28 V 550 mA 1.93GHz ~ 1.99GHz 19dB 29.5W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 550 mA 1.93GHz ~ 1.99GHz 19dB 29.5W SOT502B

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

BFS505 NPN PNP Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Place of Origin:Original

BLF6G20-230PRN,118 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 1.8GHz ~ 1.88GHz Gain 17.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 2A Power - Output 65W Voltage - Rated 65V Package / ...

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Model Number:BC817-25

Place of Origin:Original & New

BC817-25 45 V, 500 mA NPN general-purpose transistors SOT23 Original Description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Feature: • High current • Three current gain selections • AEC-Q101 qualified ...

Model Number:2SC2782

Place of Origin:Malaysia

Brand Name:KAIGENG

2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ...

Place of Origin:Jiangsu, China

Brand Name:RFint

Model Number:YSGM060808

Innotion Original RF VCO 8dBm 615MHZ-950MHz Voltage Controlled Oscillator for Intergrated Circuit ChipYSGM060808 with High Output Power Product Description YSGM060808 is a highly integrated, standard package size VCO, using a high cut-off frequency RF ...

Model Number:BFP840FESDH6327XTSA1

...RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high RF performance and robustness, featuring a maximum RF input power of 20 dBm and 1.5 kV HBM ESD hardness. With a high transition frequency (fT = 85 GHz), it delivers class-leading noise performance (NFmin = 0.75...