blf6g20 110 112 mosfet transistor

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 900 mA 1.93GHz ~ 1.99GHz 19dB 25W SOT502A

Model Number:BLF6G20-110,112

RF Mosfet 28 V 900 mA 1.93GHz ~ 1.99GHz 19dB 25W SOT502A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 900 mA 1.93GHz ~ 1.99GHz 19dB 25W SOT502A

Model Number:BLF6G20-230PRN,112

BLF6G20-230PRN,112 Overview\\nBLF6G20-230PRN,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G20-230PRN,112...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Model Number:BLF6G20-75,112

RF Mosfet 28 V 550 mA 1.93GHz ~ 1.99GHz 19dB 29.5W SOT502A

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Model Number:MBRF20150CT

Place of Origin:United States

Brand Name:Original

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Place of Origin:Original

BLF6G20-230PRN,118 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 1.8GHz ~ 1.88GHz Gain 17.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 2A Power - Output 65W Voltage - Rated 65V Package / ...

Brand Name:Original

Model Number:IRF3205

...MOSFET Transistor Revolutionize Your Electronic Circuits with IRF3205 MOSFET Transistor IRF3205 is a powerful and reliable N-channel MOSFET transistor that is commonly used in electronic circuits where high power switching is required. This MOSFET has a maximum voltage rating of 55 volts and can handle a continuous current of up to 110...

Brand Name:AOS

Model Number:AO4430

Place of Origin:original

AO4430 MOSFET Power Electronics Discrete Semiconductor Transistors N-Channel 30V 3W Surface Mount Package 8-SOIC ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive ...

Categories:RF Transistors

Country/Region:china

BLF574 RF Mosfet 50V 1 A 225MHz 26.5dB 400W SOT539A Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 42 A Vds - Drain-Source Breakdown Voltage: 110 V Rds On - Drain-...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVHL110N65S3F

...MOSFET NVHL110N65S3F Single N-Channel SUPERFET® III FRFET® 650 V 30 A 110 mΩ TO-247 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:Infineon

Model Number:IRFP064NPBF

Place of Origin:Original

...Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 110...

Brand Name:WHOOSH

Model Number:HX-200-5

Place of Origin:CHINA

...110*50 IP 20 over voltage, over load, short circuit >78% Installation Features: DUAL TRANSISTOR FORWARDER SCHEME: Adopt advanced power management chip scheme which is mature and reliable for many years Two-transistor forward uses two mosfets. mosfet has small

Brand Name:Original Factory

Model Number:NVBG020N090SC1

Place of Origin:CN

... Transistors, package is D2PAK-7L. Specification Of NVBG020N090SC1 Part Number: NVBG020N090SC1 Vds - Drain-Source Breakdown Voltage: 900 V Id - Continuous Drain Current: 112 A Rds On - Drain-Source Resistance: 28 mOhms Vgs - Gate-Source Voltage: - 8 V, +

Model Number:IXGH40N120B2D1-HXY

Product Overview The IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge...

Brand Name:ST Microelectronics

Model Number:STM32F051K6U6

Place of Origin:CHINA

STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely ...

Brand Name:INFINEON

Model Number:IRF3205PBF

...: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 110 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source ...