bla1011 300 mosfet transistor

Model Number:BLA1011-300,112

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLA1011-300,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 32 V 150 mA 1.03GHz ~ 1.09GHz 16.5dB 300W LDMOST

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT Electronics ...

Model Number:BLA1011-300,112

RF Mosfet 32 V 150 mA 1.03GHz ~ 1.09GHz 16.5dB 300W LDMOST

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 32 V 150 mA 1.03GHz ~ 1.09GHz 16.5dB 300W LDMOST

Brand Name:Anterwell

Model Number:IRFD120

Place of Origin:original factory

...300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original

Model Number:STD12N10L

... with STD12N10L MOSFET Transistors Pros and Cons of using STD12N10L MOSFET Transistors As a seeker of powerful performance from your electronic devices, you’ve likely come across the STD12N10L MOSFET Transistors. These transistor components are renowned...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

Mos Audio Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol ...

Brand Name:ONSEMI

Model Number:2N7002LT1G

Place of Origin:China

... performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • 2V Prefix for

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Model Number:IRFD120

Place of Origin:original factory

...300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Brand Name:Original Factory

Model Number:NTMFS4C55NT1G

Place of Origin:CN

Integrated Circuit Chip NTMFS4C55NT1G NTMFS4C55 MOSFET Transistor DFN5 Features Pulse Test: pulse width≤300 us, duty cycle≤2%. Switching characteristics are independent of operating junction temperatures. Surface−mounted on FR4 board using 1 sq−in pad, 1 ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

Product Range STB24N60DM2 Semiconductors Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery ...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...