bipolar junction transistor 30hfe

Brand Name:Nexperia

Model Number:PMBT3904

Place of Origin:Shenzhen,China

Bipolar Junction Transistor PMBT3904 Small signal NPN Minimum current magnification (hFE)30 Product description Part number PMBT3904 is manufactured by Nexperia Company and distributed by AYE. As one of the leading distributors of electronic products, we ...

Brand Name:original

Model Number:2N3439

Place of Origin:original

2N3439 Discrete Semiconductors Bipolar Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector...

Brand Name:ROHM Semiconductor

Model Number:2SB1561

Place of Origin:JAPAN

...UTC ICS 2SB1561 Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration...

Brand Name:Original

Model Number:BC856

... for automatic insertion For Switching and AF Amplifier Applications Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors,

Place of Origin:US

Brand Name:Original

Model Number:2SA1837/2SC4793

Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC ...

Brand Name:Texas Instruments

Model Number:TPS54418ARTER

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS54418ARTER Vin (Min) (V) 2.95 Vin (Max) (V) 6 Vout (Min) (V) 0.8 Vout (Max) (V) 4.5 Iout (Max) (A) 4 Iq (Typ) (uA) 350 Switching frequency (Min) (kHz) 200 Switching frequency (Max) (kHz) 2000 Features Enable, ...

Brand Name:Original

Model Number:BC856

... for automatic insertion For Switching and AF Amplifier Applications Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors, inductors, etc.)

Model Number:KSE13009I

Place of Origin:Original

Brand Name:Original

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Model Number:MMST5551

Place of Origin:Malaysia

Brand Name:KAIGENG

MMST5551SOT-323 Electronic Components IC MCU Microcontroller Integrated Circuits MMST5551 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:Original

Model Number:MMUN2214LT1G

Place of Origin:Original

... Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor ...

Brand Name:Diodes Incorporated

Model Number:ZXTN25100BFHTA

Place of Origin:USA

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN ...

Brand Name:Original Factory

Model Number:DF17MR12W1M1HFB68BPSA1

Place of Origin:CN

..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -

Brand Name:Diodes Incorporated

Model Number:MMBT3904-7-F

Place of Origin:USA

MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3 Category Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Mfr Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max...

Brand Name:Nexperia USA Inc

Model Number:PBHV8540X,115

...Bipolar BJT Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Power Discrete Devices Super Junction MOSFET with Ultra-low Junction Capacitance *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, ...

Brand Name: USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Bipolar (BJT) Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor...

Brand Name:Nexperia USA Inc.

Model Number:PBHV8540X,115

Place of Origin:CHINA

...Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Bipolar Junction Transistors The first bipolar junction transistors were

Categories:Discrete Semiconductor Products

Country/Region:china

...40 is a general-purpose NPN bipolar junction transistor (BJT) that offers excellent performance and versatility in a compact package. Designed for a wide range of applications, this transistor is well-suited for use in amplifiers, switches, and oth...

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

...-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS short...