| Sign In | Join Free | My insurersguide.com |
|
All bga 78 synchronous dynamic random access memory wholesalers & bga 78 synchronous dynamic random access memory manufacturers come from members. We doesn't provide bga 78 synchronous dynamic random access memory products or service, please contact them directly and verify their companies info carefully.
| Total 10 products from bga 78 synchronous dynamic random access memory Manufactures & Suppliers |
|
|
|
Brand Name:Original Factory Model Number:CXDQ2BFAM Place of Origin:CN ...Memory IC Chip DDR4 Memory Chip 4Gbit Synchronous Dynamic Random Access Memory Product Description Of CXDQ2BFAM CXDQ2BFAM is commercial-grade DDR4 memory chip manufactured using advanced semiconductor processes. This product features a 4GB (4Gb x 16) capacity, supports a 2400Mbps data transfer rate, operates at 1.2V, utilises a 78-BGA... |
ShenZhen Mingjiada Electronics Co.,Ltd.
|
|
|
Brand Name:Winbond Model Number:W9825G6KH-6I Place of Origin:CN ...4M 4BANKS 16BITS SDRAM High-speed Synchronous Dynamic Random Access Memory The W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM) organized as 4M words * 4 banks * 16 bits. This memory module delivers exceptional data bandwidth of ... |
Shenzhen Filetti Technology Co., LTD
|
|
|
Brand Name:SKHYNIX Model Number:H9HCNNNBPUMLHR- NMO Place of Origin:KOREA H9HCNNNBPUMLHR NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
|
|
Categories:Microchip Integrated Circuit Country/Region:china MT40A2G8SA-062E:F MT40A2G8SA-062E IT:F Synchronous Dynamic Random Access Memory IC D8CJW MT40A2G8SA 1.2V DRAM DDR4 16Gbit 2G x 8bit 1.6 GHz FBGA78 MT40A2G8SA-062E:F MT40A2G8SA-062E IT:F For more ... |
HK NeoChip Technology Limited
|
|
|
Place of Origin:original Brand Name:original Model Number:W9825G6KH-6 #detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px... |
Shenzhen Anxinruo Technology Co., Ltd.
|
|
|
Brand Name:MICRON Model Number:MT41K128M16JT-107:K Place of Origin:original MT41K128M16JT-107:K Chipscomponent Electronic Components IC Chips MT41K128M16JT-107:K DDR SDRAM IC electronic chip brand original FBGA-96(8x14) Dynamic Random Access memory Dynamic random access memory DDR3 V89C 2Gb Category Integrated Circuits (ICs) Mfr ... |
Shenzhen Xinshengyuan Electronic Technology Co., Ltd.
|
|
|
Brand Name:Micron Technology Inc. Model Number:MT46V16M16P-5B:M Place of Origin:original ... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... |
Shenzhen Sai Collie Technology Co., Ltd.
|
|
|
Brand Name:MICRON Model Number:MT48LC4M16A2TG Place of Origin:Original ...Synchronous Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous... |
ChongMing Group (HK) Int'l Co., Ltd
|
|
|
Brand Name:MICRON Model Number:MT48LC4M16A2TG Place of Origin:Original ...Synchronous Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
|
|
Brand Name:Micron Technology Inc. Model Number:MT48LC2M32B2P-6:G TR ..., CLK). Each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a |
Sanhuang electronics (Hong Kong) Co., Limited
|