ad8361armz reel7 rf power amplifier transistor

Brand Name:Analog Devices Inc.

Model Number:AD8361ARMZ-REEL7

Place of Origin:Multi-origin

...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW903

Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Brand Name:OEM

Place of Origin:China

... RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the...

Place of Origin:Netherlands

Brand Name:ORIGINAL

Model Number:MRF6VP11KH

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Model Number:2SC2782

Place of Origin:Malaysia

Brand Name:KAIGENG

2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:US

Brand Name:Original

Model Number:2sc2078

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Categories:Amplifier

Country/Region:china

Good quality Electronic Component provider from China——GS Electronics, Product Details: AD8605ARTZ-REEL7 Introduction: Welcome to the detailed product page for the AD8605ARTZ-REEL7. This low-power, precision rail-to-rail input and output operational ...

Brand Name:LDSK

Place of Origin:Guangdong, China

Product Parameters --GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. --The ...

Brand Name:Original brand

Model Number:STM32F765ZIT6

Place of Origin:China

... Sensor use IC Chips IC FPGA 102 I/O 144TQFP IC Chips RF Amplifier 750/860 MHz Transistor RF Mosfet LDMOS (Dual) Transistor RF power transistor TO pkg Power Module IGBT Module Half Bridge 1200V 200A 1130W Module 5.8G Wireless Audio Video Receiver Module ...

Brand Name:MYT

Model Number:1.2Ghz 30W anti drone module

Place of Origin:China

...Power and Frequnecy support Customzation from 300MHz- 6GHz, 5W-200W. GaN transistors are more efficient 2, Specification Product Name RF power amplifier module (GaN) Frequency 1.2GHZ (1100-1200/1200-1300/1200-1280/1170-1280) MHz Output Power 30W Frequency and Power ...