80a power mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDH038AN08A1

High Power MOSFET FDH038AN08A1 N-Channel PowerTrench^® MOSFET, 75V, 80A, 3.8mΩ High Power MOSFET FDH038AN08A1 N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ...

Brand Name:FAIRCHILD

Model Number:FDB3632

Place of Origin:Thailand

... and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems •

Brand Name:Infineon Technologies

Model Number:IPP072N10N3GXKSA1

Place of Origin:Multi-origin

...MOSFET Power Electronics Vds: 100V Id: 72A Rds(on): 5.5mΩ Package: TO-220 Pd: 293W Qg: 43nC Qgd: 20nC Qgs: 10nC Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 80A...

Brand Name:FAIRCHILD

Model Number:FDB3632

Place of Origin:Thailand

... and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems •

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

... gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details please click here. Features ● 40V/80A, RDS(ON) ≤6.5mΩ

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:WONKEDQ，WKDQ

Model Number:UKK 80A

Place of Origin:China

80A Distribuitor Monopolar DIN Mount Junction Box UKK 80A Power Distribution Terminal Block Box on Din Rail The purpose of this terminal block is to allow versatile building of power blocks with single pole, two poles, three poles. The transparent cover ...

Brand Name:JEUNKEI

Model Number:JY4N8M

Place of Origin:China

... to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Applications: ● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V ● Fast switching and reverse body recovery ● Fully

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...