650v igbt power transistor

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Brand Name:ON

Model Number:FGH60N60SMD

Place of Origin:Original

Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Place of Origin:CN

Brand Name:Original Factory

Model Number:IGLT65R055B2

IGLT65R055B2 GaN IC GaN Bidirectional Switches 650V Bidirectional Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:onsemi

Model Number:NGTB40N120SWG

...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate ...

Brand Name:Infineon Technologies

Model Number:IKW50N65H5FKSA1

Place of Origin:original

... Collector Emitter Voltage: 650V Collector Emitter Saturation Voltage: 2.4V Operating Temperature: -40°C to 150°C Package: TO-247AC Why buy from us >>> Fast / Safely / Conveniently • ...

Brand Name:SEMICONDUCTOR

Model Number:A70QS175-4

Place of Origin:Malaysia

A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2DI50D-055A

... conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning, frequency conversion equipment, motor speed,

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...functionality of an Isolated Gate Thyristor Module (IGT) and an Insulated Gate Transistor Block (IGT) into a single integrated device. This innovative module offers unparalleled performance and efficiency in a wide range of power electronics applications.

Place of Origin:US

Brand Name:Original

Model Number:IHW20N120R3FKSA1

... (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on

Brand Name:STARPOWER

Model Number:GD150HFL120C2S

Place of Origin:China

...IGBT POWER Module GD150HFL120C2S GD200HFL120C8S Molding Type Module Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT...

Brand Name:Texas Instruments

Model Number:CDCDB800RSLR

PRODUCT DESCRIPTION Stock 200W IGBT Power Module 250MHz CDCDB800RSLR Texas Instruments IGBT Power Module Texas Instruments/TI CDCDB800RSLR Function Clock buffer, Differential Additive RMS jitter (Typ) (fs) 38 ...

Brand Name:Hua Xuan Yang

Model Number:30P06D TO-252

Place of Origin:ShenZhen China

...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power...

Brand Name:first class

Model Number:medium frequency

Place of Origin:china

...of power consumption higher than thyristor serial-connected one because it rejects current-limiting inductor inside thyristor-inverting melting furnace. Compared with thyristor, IGBT transistor can not only control conduction, but also control its turn-off