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All 600v n channel mosfet wholesalers & 600v n channel mosfet manufacturers come from members. We doesn't provide 600v n channel mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 86 products from 600v n channel mosfet Manufactures & Suppliers |
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Brand Name:FAIRCHILD Model Number:SSS7N60B Place of Origin:Original ...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Vishay Siliconix Model Number:SIHW30N60E-GE3 Place of Origin:original ... 30A 600V N Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(on) Product Technical Specifications: -Drain-Source Voltage: 600V -Continuous ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:CN Brand Name:Original Factory Model Number:MSCC60AM23C4AG Automotive IGBT Modules MSCC60AM23C4AG Modules 600V 2N-Channel MOSFET Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Canyi Model Number:10N60 Place of Origin:Guangdong, China ...600V n channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche tested to make sure quality before ship This 10N60 improved rate of change of voltage over time Mosfet General Description: The10N60H N Channel |
Shenzhen Canyi Technology Co., Ltd.
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:5N20DY TO-252 Place of Origin:ShenZhen China ...Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:STMicroelectronics Model Number:STD8NM60N Place of Origin:CHINA STD8NM60N D8NM60N N-Channel MOSFET 600V 7A (Tc) 70W (Tc) Surface Mount DPAK FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Model Number:STW48N60DM2 Place of Origin:Guangdong, China Brand Name:Original ...Channel MDmesh DM2 Power MOSFET - High-Efficiency Power Conversion Solution Achieve Optimal Efficiency with Fast Recovery and Low On-Resistance Looking for a high-performance power MOSFET that can meet the demands of the most efficient converters? The STW48N60DM2 N-Channel MOSFET is the solution you've been searching for. This powerful MOSFET... |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Brand Name:To shi ba Model Number:TK8A60DA(STA4,Q,M) Place of Origin:Shenzhen, China TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:SHENZHENFREESCALE Model Number:AOD5N50 Place of Origin:Original ... along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON) |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:STMicroelectronics Model Number:STL150N3LLH5 Place of Origin:CHN ... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Model Number:IR2130STRPBF Brand Name:Original Place of Origin:US ...Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:INFINEON Model Number:IRF7342TRPBF ... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed... |
Berton Electronics Limited
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Model Number:NTMFS4833NT1G Place of Origin:America Brand Name:ON ... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Guangdong |
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:8205A ...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Place of Origin:China Brand Name:ONSEMI Model Number:FDMS1D2N03DSD High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Diodes Incorporated Model Number:W5500 Place of Origin:Taiwan ... Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Infineon / IR Model Number:IRLML5203TRPBF Place of Origin:CHIAN ...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:INFINEON Model Number:IPD25N06S4L-30 Place of Origin:INFINEON ...Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Infineon Model Number:IRF640NPBF Place of Origin:Original Factory ...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |