50n322 igbt n channel

Brand Name:Toshiba America Electronic Components

Model Number:GT50N322A

Place of Origin:CHINA

...50N322 Toshiba America Electronic Components IGBT N-Channel 1000V 3-Pin TO-3P(N) DISCRETE IGBT Components Product Technical Specifications Part number GT50N322A Base part number 50N322 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category IGBT...

Place of Origin:CN

Brand Name:Original Factory

Model Number:ISL9V3040P3-F085C

Integrated Circuit Chip ISL9V3040P3-F085C ECOSPARK Ignition IGBT N−Channel Ignition IGBT Transistors [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ...

Brand Name:Power Integrations

Model Number:2SC0435T2G1-17

Place of Origin:TH

Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes...

Brand Name:Infineon Technologies

Model Number:IPB044N15N5ATMA1

Place of Origin:Germany

...: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id -

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:infineon

Model Number:BSM50GP120

Place of Origin:Germany

...IGBT Module Chassis Mount Module IGBT MODULE 1200V 50A Trans IGBT Module N-CH 1.2kV 50A nom 360W 24-Pin EconoPIM3 122x62mm Value 　 Channel Type N Configuration Hex Maximum Collector Emitter Voltage 1200 V Maximum Continuous Collector Current 80 A Maximum Gate Emitter Voltage ±20 V Mounting Screw Mount Pin Count 24 Product Dimensions 122 x 62 x 17 mm Supplier Package EconoPIM3 Description 1. IGBT...

Brand Name:Lingxun

Model Number:LGT40N65HB

Place of Origin:China

40A 650V High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench and field-...

Brand Name:Toshiba

Model Number:MG25Q6ES51

Place of Origin:Japan

Toshiba IGBT Power Module MG25Q6ES51 MG25Q6ES51 Product Description Brand: Toshiba Model: MG25Q6ES51 Category: Insulated Gate (MOSFET) Channel Type: N channel Conduction: enhanced Uses: A / wide band amplification Package outline: CER-DIP / ceramic line ...

Model Number:IR2130STRPBF

Brand Name:Original

Place of Origin:US

...Description Packaging Tape & Reel (TR) Part Status Active Driven Configuration Half-Bridge Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (...

Brand Name:MITSUBISHI

Model Number:M57962AL-01R-02

Place of Origin:Original Factory

...Igbt Modules M57962AL-01R-02 Hybrid IC For Driving IGBT Modules Description: M57962AL is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler.Recommended IGBT...

Brand Name:Infineon Technologies

Model Number:IRGP4068DPBF

Place of Origin:original

IRGP4068DPBF 600V 6.5A IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - ...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage...

Brand Name:Infineon Technologies

Model Number:IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12 Infineon Technologies 1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and ...

Brand Name:STMicroelectronics

Model Number:STGP7NC60HD

Place of Origin:CHINA

STGP7NC60HD GP7NC60HD TO220 N-channel very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low...

Brand Name:NVIDIA

Model Number:G84-600-A2

Place of Origin:N/S

IGBT Power Module NVIDIA G84-600-A2 Manufacturer: NVIDIA Model: G84-600-A2 Use: computer Package: BGA About US Shenzhen Yingxinyuan Electronic Technology Co., Ltd. was established in 2001. Headquartered in Shenzhen, branch offices were established in Hong Kong, Beijing, Dongguan, Shanghai and Suzhou. Yingxinyuan currently has more than 200 employees, 15% of which are senior technicians and channel...

Brand Name:IR

Model Number:IRAMX20UP60A

Place of Origin:Malaysia

IRAMX20UP60A Power Management IC Controllers & Drivers 20A 600V ING PWR HYBRID IC The IRAMX20UP60A is a 20A 600V Integrated Power Hybrid IC combination of IRs low VCE(ON) punch-through IGBT technology and the industry benchmark 3-phase high voltage and ...

Brand Name:ADI

Model Number:IKW25N120T2FKSA1

Place of Origin:Original Brand

... category Discrete Semiconductor Products manufacturer Infineon Technologies series TrenchStop ® package pipe fitting IGBT type channel Voltage collector breakdown (maximum) 1200 V Current Collector (Ic) (maximum) 50 A Current collector pulse (Icm) 100

Brand Name:ONSEMI

Model Number:MGP20N40CL

Place of Origin:Original

MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from ...