4h p type sic substrate

Brand Name:SICC

Model Number:4h-n

Place of Origin:CHINA

... substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of

Brand Name:ZMKJ

Model Number:6inch 150mm SiC Substrate

Place of Origin:CHINA

...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates...

Brand Name:PAM-XIAMEN

Place of Origin:China

...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N

Brand Name:HMT

Place of Origin:CHINA

...4H-SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:Original Factory

Model Number:A2U12M12W2-F2

Place of Origin:CN

... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on