40v enhancement mode power mosfet

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. FEATURES ● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐10V ● High density cell design for

Brand Name:Lingxun

Model Number:CS4N50A2

Place of Origin:China

...Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A VDSS:500V RDSON-typ VGS=10V: 2.1Ω FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • LED power supplies • Cell Phone Charger • Standby Power...

Brand Name:JUYI

Model Number:JY14M

Place of Origin:China

...Enhancement Mode Power MOSFET General Description Incorporating state-of-the-art trench processing techniques, the JY14M power field transistor operates with high cell density, resulting in reduced on-resistance and boasting a high repetitive avalanche rating. This unique combination makes it an exceptional device that offers both efficiency and reliability, suitable for various applications, particularly power...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMS5P02

High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:onsemi

Model Number:FDS86267P

Place of Origin:original

FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive ...

Brand Name:Hua Xuan Yang

Model Number:NCE01P18D

Place of Origin:ShenZhen China

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Model Number:AP4511GD

Place of Origin:original factory

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:SRF6S19140HS

SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:JUYI

Model Number:JY14M

Place of Origin:China

Genearl Description: The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Place of Origin:US

Brand Name:Original

Model Number:AP95T07GP

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:Original Factory

Model Number:IGLR60R340D1XUMA1

Place of Origin:CN

...Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor. Specification Of IGLR60R340D1XUMA1 Vgs(th) (Max) @ Id 1.6V @ 530µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V Power...

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

Place of Origin:CHINA

...40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:Infineon

Model Number:IRF1404PBF

Place of Origin:China

... Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...