2n 3055 transistor

Brand Name:Original Factory

Model Number:DF11MR12W1M1B11BPSA1

Place of Origin:CN

1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module​ Product Description Of DF11MR12W1M1B11BPSA1 DF11MR12W1M1B11BPSA1 is 1200 V / 11 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology, with ...

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

EM6K1T2R ROHM MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source ...

Brand Name:Nexperia

Model Number:BUK7K52-60EX

BUK7K52-60EX TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Mfr Nexperia USA Inc. Series Automotive, AEC-Q100 Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel Product Status Active Technology MOSFET (Metal ...

Model Number:2N7002

库存2N7002DW K27 72K 2N7002 7002 SOT363贴片晶体管2n 7002 702/7002 SOT-23 2n 7002 lt 2n 7002 7002N沟道MOSFET 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small ...

Model Number:Vc9806A+

Place of Origin:CHINA

... ACA: 20mA±0.8%±10, 200mA±1.5%±10,20A±2%±10 RESISTANCE: 200 Ω±0.2%±5, 2k/20k/200k/2MΩ±0.2%±1, 20 MΩ±0.5%±5 CAP:2n/20n/200n/2uF±2.5%±50,200 uF±5%±50 FREQ : 20kHz±2%±5 CONTINUITY BUZZER DIODE TRANSISTOR HFE

Brand Name:PowerStorm

Model Number:FT80

Place of Origin:Zhejiang

... 52x37.5mm Displacement 80.7cc Max. output 2.4HP/3600rpm Max. torque 3.2N.m/3000rpm Compression ratio 7.7:1 Ignition system Non-contact transistorized ignition(TCI) Start system Recoil start Feul consumption ≤450g/kw.h Feul tank capacity 1.6L Oil tank ...