250v power mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDB44N25

High Power MOSFET FDB44N25 Power MOSFET, N-Channel, UniFETTM, 250V, 44A, 69mΩ, D2PAK [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:ON

Model Number:FQA40N25

Place of Origin:original

FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series Output ...

Brand Name:IRF

Model Number:PVT312L

Place of Origin:Original

ingle Pole, Normally Open, 0-250V, 190mA AC/DC Features " HEXFET Power MOSFET output " Bounce-free operation " 4,000 VRMS I/O isolation " Load current limiting " Linear AC/DC operation " Solid-State Reliability " UL recognized and BABT certified " ESD ...

Brand Name:ONSEMI

Model Number:NTF3055L108T1G

Place of Origin:Original

... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK LIST SN74LVC1G14DBVR 96000 TI 16+ SOT23-5

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:Reebo

Model Number:RB-A008-0012

Place of Origin:Chengdu

...Power Cable 3Pin 250V 2.5A US Power Cord CCC Power Cable​ 1. PVC Jacket Environmentally friendly, stylish tensile heat resistant durable 2. Standard world tail socket, resistant to plug, practical and safe 3. Oxygen-free copper wire core 4. 7-10 days delivery time 5. MOQ 500 Pcs Item: power cable Color:black Material:PVC and copper Length:1.5meters(4.9ft) Wire gauge: 0.75 mm2 x 2 Rate voltage / current: 250V...

Brand Name:SINO-TECH

Model Number:Power Cord - C13 to C14

Place of Origin:China

... 250 Volts Wire Gauge 18 AWG Common Usage Typically used with Data Center/IT specific PDUs This type of power cord is commonly used in data centers and IT environments, particularly with specific Power Distribution Units (PDUs) that have

Brand Name:Vishay / Siliconix

Model Number:IRFP460LC

...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor control circuits. Here are some ...

Brand Name:OEM

Model Number:AUP3-C13-10A-002

Place of Origin:China

... C13. It can be customized for C5, C14, C19, C20 etc.. Rated voltage is 10A 250V. The Wire Gauge is H05VVF 3G*0.75mm2. Jacket Material is PU or PVC. Temperature Rating -20 deg C to 100 deg C The ...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ...

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to ...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...