20v n channel mosfet transistor

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

...MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs (Max) ±20V...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ...

Brand Name:Original Factory

Model Number:IMBF170R1K0M1

Place of Origin:CN

...MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V​ Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling higher frequency. Specification Of IMBF170R1K0M1 Part Number IMBF170R1K0M1 Rds On (Max) @ Id, Vgs 1000mOhm @ 1A, 15V Vgs(th) (Max) @ Id 5.7V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 5 nC @ 12 V Vgs (Max) +20V...

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor...

Brand Name:Hua Xuan Yang

Model Number:12N60

Place of Origin:ShenZhen China

...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet

Brand Name:Ti

Model Number:FDMS86181

... 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:Vishay

Model Number:SI2333DDS-T1-GE3

Place of Origin:China

...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

ISO9001.pdf Application: IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and high switching speed, making it very suitable...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage and variable ...

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute ...

Model Number:MBRF10200CT

Place of Origin:United States

Brand Name:Original

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Model Number:D2003UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power ...

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDG6317NZ

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...