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All 20ma silicon dual gate mosfet wholesalers & 20ma silicon dual gate mosfet manufacturers come from members. We doesn't provide 20ma silicon dual gate mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 35 products from 20ma silicon dual gate mosfet Manufactures & Suppliers |
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Brand Name:PHILIPS Model Number:BF981 Place of Origin:Netherland Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Original Factory Model Number:DF11MR12W1M1PB11BPSA1 Place of Origin:CN ...Channel (Dual) MOSFET Arrays. Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C 50A (Tj) Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input Capacitance (Ciss) |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:ONSEMI Model Number:BD135 Place of Origin:Original BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:ONSEMI Model Number:BD135 Place of Origin:Original BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:INFINEON Model Number:FF300R12KT4 Place of Origin:HUNGARY IGBT Module FF300R12KT4 Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Model Number:D2010UK Place of Origin:Malaysia Brand Name:KAIGENG D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Silicon Carbide Low On Resistance Field Effect Transistor for UPS Power Supply Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-frequency operation, low gate... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:AP50N10D Place of Origin:ShenZhen China ... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:IT Model Number:IRF630NSTRLPBF Place of Origin:original ... Rectifier Corporation. It is optimized for low voltage, high speed switching applications. This MOSFET is housed in a TO-220AB package. Features: • Low RDS(on) • Low gate charge • Low input and output capacitance • Avalanche energy rated • |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:TI Model Number:CSD75207W15 Place of Origin:Philippines ... Category Power MOSFET Configuration Dual Process Technology NexFET Channel Mode Enhancement Channel Type P Number of Elements per Chip 2 Maximum Gate Source Voltage (V) -6 Maximum Gate Threshold Voltage (V) 1.1 Maximum Continuous Drain Current (A) 3.9 |
Sunbeam Electronics (Hong Kong) Limited
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:HXY9926A HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Infineon Model Number:IRF7342TRPBF Place of Origin:China ... Dual 55V 6.5A MOSFET Pair with 50mandOmega; RDS(on) Fast Switching Low Gate Charge SOIC-8 Package ESD Protected andamp; Ideal for DC-DC/Synchronous Rectification andnbsp; Features Generation V Technology Ultra Low On-Resistance Dual P Channel MOSFET ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:STMicroelectronics Model Number:PM8834 Gate Drivers 4 A dual low side MOSFET Driver Product Attribute Attribute Value Select Attribute Manufacturer: STMicroelectronics Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Low-Side Mounting Style: SMD/SMT Package... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:JUYI Model Number:JY2605M Place of Origin:China ...density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E ...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no |
Mega Source Elec.Limited
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Brand Name:ON Semiconductor Model Number:FDS8984 Place of Origin:CHINA ...Mosfet Array 2 N-Channel (Dual) 30V 7A 1.6W Surface Mount 8-SOIC FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Star merter Model Number:CYYZ3051SAY Place of Origin:China ... transmitter uses monocrystalline silicon resonant sensor technology. The double-flange capillary structure realizes mechanical isolation and thermal isolation, which can cope with complex corrosive ... |
Star Sensor Manufacturing Co., Ltd
Hebei |
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Brand Name:original Model Number:SI6926DQ Place of Origin:Original Manufacturer ...DUAL N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Detailed Product Description High Light: power led driver circuit , offline led driver ic Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:FUJI Model Number:FMH23N50E Place of Origin:Original ...Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Microchip Technology Model Number:TC4426EOA713 Place of Origin:Philippines ...Dual Inverting Power MOSFET Drivers Integrated circuits IC PMIC TC4426 TC4427 TC4428 Microchip 1.5A Dual Inverting Power MOSFET Drivers Integrated circuits IC TC4426EOA713 TC4426EOA713 Specification: Part number TC4426EOA713 Category Integrated Circuits (ICs) PMIC - Gate... |
Angel Technology Electronics Co
Hongkong |