200w rf power transistors

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:SWT

Model Number:SW-PAR-20004000-53C

Place of Origin:China

... 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and

Brand Name:TeXin

Model Number:TX-1.2RFPA

Place of Origin:Shenzhen ,China

...Power 5-200W RF Power Amplifier UHF 433 MHz For Signal Jammer MOdule Very powerful 433MHz signal jammer module , 5-200w power can be customized . This RF amplifier has rugged exterior aluminum alloy shell , and with temperature and standing wave protection , have good performance , which have RF sweep frequency technology , so this RF module can be widely used for anti drone jammer field . Other frequency bands of RF...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:NENGXUN

Model Number:NX-PA20-1000

Place of Origin:China

NXPA20-1000MHz 200W RF Power Amplifier – High-Integration & High-Performance Signal Amplification Equipmen Product Overview This NXPA20-1000MHz 200W RF Power Amplifier is a professional-grade device designed for high-demand signal amplification scenarios...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:LENOLINK

Model Number:200W RF LOAD with 4.3-10 connector

Place of Origin:CHINA

200W high power RF Load with PIM 160dBc 4.3-10connector 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Connector :4.3-...