200v n channel mosfet

Model Number:FQPF10N20C

Place of Origin:original factory

FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...

Brand Name:Anterwell

Model Number:FQPF10N20C

Place of Origin:original factory

FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...

Brand Name:Original

Model Number:IRF9640PBF

Place of Origin:Original

IRF9640PBF Integrated Circuit IC Chips Electronic Components IC MOSFET PRODUCT DESCRIPTION Part number # IRF9640PBF is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ...

Brand Name:IOR

Model Number:IRFP260NPBF

Place of Origin:CHINA

...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V...

Brand Name:onsemi

Model Number:FDD2670

Place of Origin:original

FDD2670 MOSFET Power Electronics TO-252AA Package 200V N-Channel High power and current handling capability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Hua Xuan Yang

Model Number:5N20DY

Place of Origin:ShenZhen China

...200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other FEATURES VDS =200V...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDS2670

High Power MOSFET FDS2670 200V N-Channel PowerTrench® MOSFET 3.0A, 130mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ...

Brand Name:Infineon

Model Number:IRFP4668PBF

Place of Origin:China

.... It belongs to the HEXFET® series and is suitable for use as a single FET in circuit designs. With a drain-to-source voltage (Vdss) rating of 200V, this MOSFET can handle high voltage levels, making it suitable for demanding applications. It has

Brand Name:Vishay

Model Number:IRFP9240PBF

Place of Origin:Original

... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Brand Name:Infineon

Model Number:IRFB260NPBF

Place of Origin:China

... 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications such as switch-mode power supplies (after AC rectification, e.g., 85-265VAC), motor drives, and ...

Brand Name:VISHAY

Model Number:IRFP9240PBF

Place of Origin:USA

...Mosfet 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...

Brand Name:INFINEON

Model Number:BSC220N20NSFD

INFINEON Chip BSC220N20NSFD MOSFET N-CH 200V 52A TSON-8 Manufacturer: Infineon Product Category: MOSFET Packaging: Reel Brand: Infineon Technologies Product Type: MOSFET Subcategory: MOSFETs Company introduction: is a subsidiary of Chusinly (Hong Kong...

Brand Name:STMicroelectronics

Model Number:STL150N3LLH5

Place of Origin:CHN

... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...

Brand Name:INFINEON

Model Number:IRFB4227PBF

IRFB4227PBF TO-220 N-channel 200V/65A in-line MOSFET Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFB4227PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed...

Model Number:NTMFS4833NT1G

Place of Origin:America

Brand Name:ON

... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ...

Brand Name:Original Factory

Model Number:FP75R12N2T4BPSA1

Place of Origin:CN

...Mosfet Array, 2 N-Channel (Half Bridge) Module. ​Specification Of FF2MR12KM1HOSA1 Part Number FF2MR12KM1HOSA1 Series CoolSiC™ Configuration 2 N-Channel (Half Bridge) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current -

Brand Name:Diodes Incorporated

Model Number:W5500

Place of Origin:Taiwan

... Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)