1a collector current pnp transistor

Brand Name:Nexperia

Model Number:BCX54-10-QX

Place of Origin:China

...ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1837/2SC4793

... Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic...

Place of Origin:/

Brand Name:Fairchild

Model Number:MJD45H11

...PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage ​ Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Current - Collector...

Brand Name:RENESAS

Model Number:2SD1899

Place of Origin:JAPAN

...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector...

Brand Name:Fairchild Semiconductor

Model Number:PN4258

Place of Origin:CHINA

...PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10nA DC Current...

Brand Name:KEC

Model Number:BD140

Place of Origin:Original

GENERAL PURPOSE APPLICATION. FEATURES ·High Current. (Max. : -1.5A) ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage ...

Brand Name:UCHI

Model Number:SS8050W

Place of Origin:Dongguan China

...-323 ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V

Brand Name:RENESAS

Model Number:2SD1899

Place of Origin:JAPAN

...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector...

Brand Name:Huixin

Model Number:MMDT3946DW SOT-363

Place of Origin:China

... Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2N5401

...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector...

Brand Name:Original

Model Number:BC856

... for automatic insertion For Switching and AF Amplifier Applications Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors,

Brand Name:STMicroelectronics

Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P

Place of Origin:CHINA

...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors...

Brand Name:STMicroelectronics

Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P

...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP

Brand Name:TOSHIBA

Model Number:TK5A90E,S4X

Place of Origin:Original

TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to ...

Brand Name:Texas Instruments

Model Number:TPS56428RHLR

Place of Origin:N/S

...PNP Transistor Texas Instruments/TI TPS56428RHLR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 53 pct. Popularity Medium MSL Level 2 (1 Year) Mounting Style SMD Temperature Range - Operating -40°C ~ 85°C Synchronous Rectifier Yes Frequency - Switching 650kHz Current...

Brand Name:Toshiba

Model Number:2SA1943-O(Q)

Place of Origin:JP

...Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.5 V Maximum DC Collector Current...

Brand Name:original

Model Number:JAN2N2907A

Place of Origin:original

...Transistors PNP Single Through Hole original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package/Case: TO-18-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 60 V Collector- Base Voltage VCBO: - 60 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 400 mV Maximum DC Collector Current...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current...

Brand Name:Diodes Incorporated

Model Number:ZX5T1951GTA

Place of Origin:USA

ZX5T1951GTA Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • ...