162 mohms mosfet

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial ...

Brand Name:Infineon Technologies

Model Number:IRFP4110PBF

Place of Origin:Mulit-origin

...MOSFET Description: This is an N-Channel, through-hole MOSFET with an on-state resistance of 4.7 mOhms. It is capable of withstanding a maximum drain-source voltage of 100V and a maximum drain current of 72A. Features: - Robust N-Channel MOSFET - Through-hole package - On-state resistance of 4.7 mOhms...

Brand Name:Original brand

Model Number:STL26N60DM6

Place of Origin:Original

Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVTFS5811NL

High Power MOSFET NVTFS5811NL Power MOSFET 40V 40A 6.7 mOhm Single N-Channel u8FL Logic Level [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components ...

Brand Name:NXP

Model Number:BUK7K6R2-40EX

Place of Origin:NXP

BUK7K6R2 40EX 5.8 MOhms LED Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/...

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

... Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1.5 V

Brand Name:Ti

Model Number:CSD19532Q5B

... Rectifier for Offline and Isolated DC- DC Converters Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:TOSHIBA

Model Number:IRF740PBF

Place of Origin:Original Factory

Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-...

Brand Name:original

Model Number:SI4840BDY-T1-GE3

Place of Origin:original

... Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 9 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

... (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:APTM10SKM05TG

APTM10SKM05TG Automotive IGBT Modules 100V 4.5 mOhm Buck Chopper Si MOSFET Module SP4 Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:Infineon

Model Number:IPP65R190CFD7XKSA1

Place of Origin:Germany

...MOSFET HIGH POWER NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: MOSFET Technology: Si Installation style: Through Hole Package/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage: 650 V Id-continuous drain current: 12 A Rds On-drain-source on-resistance: 190 mOhms...

Brand Name:INFINEON

Model Number:IRLML6401TRPBF

... Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 50 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 4 V

Brand Name:onsemi

Model Number:NTE4153NT1G

...MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 915 mA Rds On - Drain-Source Resistance: 230 mOhms...

Brand Name:Original

Model Number:IRLML2502TRPBF

Place of Origin:Original

MOSFET IRLML2502TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.2 A Rds On - Drain-Source Resistance: 45 mOhms...

Brand Name:INFINEON

Model Number:IRF100S201

Place of Origin:CHINA

IRF100S201 100% Original MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg 1. Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits ...

Brand Name:VISHAY

Model Number:SI1401EDH-T1

...MOSFET Specifications: Datasheets SI1401EDH Product Photos SOT-363 PKG Standard Package 3,000 Category Discrete Semiconductor Products Family FETs - Single Series TrenchFET® Packaging Tape & Reel (TR) FET Type MOSFET P-Channel, Metal Oxide FET Feature Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25° C 4A Rds On (Max) @ Id, Vgs 34 mOhm...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

...MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id) / 25°C:14A (Tc) Drive Voltage (Max Rds On, Min Rds On):10V Rds On (Max) / Id, Vgs:380 mOhm...

Brand Name:ST

Model Number:PD57018-E

...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating ...