160nc gate charge single bipolar transistor

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ...

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

...Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 446W Switching Energy 995µJ (on), 1070µJ (off) Input Type Standard Gate Charge...

Brand Name:FSC

Model Number:FDPF10N60NZ

Place of Origin:CHINA

FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F N-Channel MOSFET 600V, 10A, 0.75  Features •RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% ...

Brand Name:Original Factory

Model Number:IXYH55N120C4

Place of Origin:CN

...Single IGBT Transistors Product Description Of IXYH55N120C4 IXYH55N120C4's thin wafer technology and improved processes enable a low gate charge QG, hence, low gate-current requirement. Specification Of IXYH55N120C4 Part Number IXYH55N120C4 Technology: Si Mounting Style: Through Hole Configuration: Single...

Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Brand Name:Hua Xuan Yang

Model Number:AP5N10SI

Place of Origin:ShenZhen China

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It...

Model Number:CA3140AMZ

Place of Origin:original factory

...voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very

Place of Origin:US

Brand Name:Original

Model Number:IHW20N120R3FKSA1

...(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on

Brand Name:Original Factory

Model Number:BSZ050N03LSGATMA1

Place of Origin:China

... Digital Signature Algorithm (ECDSA):ECDSA-based authentication Product Specifications Gate Charge (Qg) (Max) @ Vgs: 35 NC @ 10 V Technology: MOSFET (Metal Oxide) FET Type N-Channel Drain to Source ...

Brand Name:onsemi

Model Number:ATP114-TL-H

Place of Origin:United States

ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A...

Brand Name:onsemi

Model Number:NTGS4141NT1G

Place of Origin:original

... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 560 ...

Brand Name:KRUNTER

Model Number:KWP75H12E4-7M

Place of Origin:CHINA

... Gate Bipolar Transistor Assembly (IGBT), an Isolated Gate Thyristor Module, and an Insulated Gate Bipolar Transistor Element in a single package. This high-performance module is designed to provide efficient power switching capabilities in a wide range of