12ghz x band gan power amplifier

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPM1021

Wireless Communication Module QPM1021 10GHz To 12GHz 100 W GaN Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:SWT

Model Number:SW-PA-600012000-47C

Place of Origin:China

X Band Power Amplifier 6-12 GHz Psat CW 47 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and ...

Brand Name:VBE

Model Number:VBE-LP10-12G60

Place of Origin:China

Product Features: 1.Wide Frequency band; 2.Low Output noise; 3.Low power consumption, high linearity; 4.Hybrid micro-assembly process, small size, high stability; 5.Wide operating temperature range; 6.Custom made available Technical Specifications: NO. ...

Brand Name:ATNJ

Model Number:AT-20-700-20W

Place of Origin:China

...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also

Brand Name:LDSK

Model Number:LDK-TZ-KPG-KGAN-100W

Place of Origin:China

...Power GaN RF Power Amplifier 100W with Wide Frequency Coverage | 4000–6000MHz Ultrawide Module for Industrial Applications Item Detials: This series of GaN power amplifier modules adopt advanced gallium nitride (GaN) technology, which has high efficiency, high gain, wide bandwidth and excellent thermal stability. The module is compact, with low temperature start-up, supports multi-band coverage and multi-power...

Brand Name:SZHUASHI

Model Number:YP40601650T

Place of Origin:Jiangsu，China

SZHUASHI High Efficiency C-Band GaN 50W Power Amplifier Chip YP40601650T for 4400-6000MHz Product Description YP40601650T is a 50-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high ...

Brand Name:Qorvo

Model Number:QPA2933

... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to

Brand Name:OEM

Place of Origin:China

...GaN Amplifier Drone Counter Module for Anti Drone System Product Parameters Brand Name PDFY Working frequency 2400-2500MHz Power 100W Working Voltage 30V Max Output Power 50dBm Working Efficiency ≥60% Gain 45±1.0,45±1.0 (external input 5dbm, power amplifier output 50dbm) In-band

Brand Name:OEM/ODM

Model Number:JYT-M500-100

Place of Origin:China

Product Parameters Main Components : 1, Adjustable Bandwidth 2, Adjustable Bandwidth 3, Adjustable Driver Tube Voltage 4, Tube Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 1.RF Data Item Spec. Remarks Frequency Range(MHz) 500-600 Bandwidth Range±10MHz ...