1200v igbt power transistor

Brand Name:INFINEON

Model Number:FF450R12KT4

Place of Origin:Original

... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG7PH42UDPBF

...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Place of Origin:CN

Brand Name:Original Factory

Model Number:GD900SGF120A3SN

Automotive IGBT Modules GD900SGF120A3SN 900A 1200V IGBT Power Modules A3 Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... Oxide Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior...

Model Number:FF300R12KS4

Place of Origin:Guangdong, China

Brand Name:Original brand

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Brand Name:fuji

Model Number:2MBI100SC-120

Place of Origin:JAPAN

...IGBT Power Module 1200V / 100A 2 in one-package 2MBI100SC 120 IGBT Power Module 1200V / 100A High Speed Switching Voltage Drive 1200V / 100A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Description 1. IGBT...

Brand Name:STARPOWER

Model Number:GD300HFL120C2S

Place of Origin:China

...IGBT POWER Module GD300HFL120C2S ,1200V /300A Molding Type Module Molding Type Module 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT...

Brand Name:Fairchild Semiconductor

Model Number:FGA15N120ANTDTU

Place of Origin:original

... conduction losses - Low switching losses - High frequency operation - Easy to install and maintain Product Specifications: - Rated Voltage: 1200V - Rated Current: 15A - Maximum Collector-Emitter Voltage: 1200V -

Place of Origin:PHILIPPINE

Brand Name:IR

Model Number:IRPT2061A

...Power Module for 1.5 hp Motor Drives Description: The IRPT2061A power module shown in Figure 1 is a chip and wire epoxy encapsulated module. It houses input rectifiers, brake IGBT and freewheeling diode, output inverter, current sense shunts and NTC thermistor. The 3-phase input bridge rectifiers are rated at 1600V. The brake circuit uses 1200V IGBT and freewheeling diode. The inverter section employs 1200V...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Model Number:SKM600GA12E4

Brand Name:Original

Place of Origin:US

Product Detail Transistor Polarity: NPN DC Collector Current: 913A Collector Emitter Saturation Voltage Vce(on): 1.8V Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style: Module Operating Temperature Max:125°C Product Information 1. Stock,Order ...

Brand Name:INFINEON

Model Number:FS50R12W2T4

Place of Origin:GERMANY

FS50R12W2T4IGBT Igbt Power Module 1200V 50A IGBT - Inverter Configuration TypischeAnwendungen TypicalApplications • Klimaanlagen • AirConditioning • Motorantriebe • MotorDrives • Servoumrichter • ServoDrives • USV-Systeme • UPSSystems ...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:POWER-SEM

Model Number:PSPC822-90/F

Place of Origin:CHINA

IGBT driver, for 2mbi1400vxb120-50, or1400A, 1200V IGBTs, PSPC822-90/F electronic interface or Optical fiber interface

Brand Name:GDHY

Model Number:C33122224JX10-01

Place of Origin:CHINA

C33 0.22uF 1200V Aexit 1200V Capacitor Pulse High Frenquency Snubber Capacitor for Welding Machine/ Marks Machine Technical Parameter Reference Standards IEC61071 Operating Temperature Range -40℃~85℃ Capacity Range 0.1μF ~5.0 μF Rated Voltage 700VDC~...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...functionality of an Isolated Gate Thyristor Module (IGT) and an Insulated Gate Transistor Block (IGT) into a single integrated device. This innovative module offers unparalleled performance and efficiency in a wide range of power electronics applications.