1200v igbt half bridge module

Place of Origin:CN

Brand Name:Original Factory

Model Number:GCMX020A120B2B1P

Automotive IGBT Modules GCMX020A120B2B1P MOSFET Module 1200V SiC Half Bridge Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:Infineon

Model Number:FF200R12KT4

Place of Origin:China

half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module Maximum Rated Values Collector-emitter voltage Tvj = 25°C VCES 1200 V Continuous DC collector current TC = ...

Brand Name:Infineon Technologies

Model Number:FF200R12KT4

Place of Origin:LW

IGBT Power Module 1700V 310A FF200R17KE3 Half Bridge FF200R12KT3 FF200R12KT4 IGBT Type Trench Field Stop Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 310A Power - Max 1250W Vce(on) (...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

... exceptional performance in various industrial settings requiring efficient power management. This specific product falls under the category of IGBT Module and is known as the KWP75H12E4-7M IGBT Module Half-Bridge Circuit. It is engineered to cater to the

Model Number:FF450R12KT4

Brand Name:Original

Place of Origin:US

... @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module 1. Stock,Order goods or

Brand Name:GSKA

Model Number:MXG/Y16-15

Place of Origin:Donggaun,china

... to D2 and D4, and D2 and D4 are cut off. The circuit consists of e2, D1, Rfz and D3 power-on circuits. At Rfz, positive half-wave washing voltage is formed on the upper side

Brand Name:KOBEN

...IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 300A Power - Max 2270W Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 30nF @ 10V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module

Brand Name:INFINEON

Model Number:FF450R12KT4

Place of Origin:Original

... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The

Place of Origin:Beijing China

Brand Name:power-sem

Model Number:PSHI0420

17 mm the plug-and-play series of IGBT module, drive 1700 v, 600 a half bridge IGBT, has high common-mode interference ability, integrated interlock and dead zone, providing interface compatible concept at 2 sp0115t model (control) can make all the way...

Brand Name:Infineon Technologies

Model Number:FF450R12KT4

Place of Origin:Original

...>400 • Highcreepageandclearancedistances •Pre-appliedThermalInterfaceMaterial Product Attributes Product Status Active IGBT Type Trench Field Stop Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (...

Brand Name:Mitsubishi Electric

Model Number:CM300DU-24NFH

Place of Origin:JP

CM300DU-24NFH IGBT Modules IGBT MODULE NFH-SERIES HI-FREQUENCY DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-...

Place of Origin:Original

APT35GP120BG IGBT Power Module Transistors IGBTs Single APT35GP120BG Specifications Part Status Active IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) 140A Vce(on) (Max) @ ...

Brand Name:infineon

Model Number:IR2104STRPBF

Place of Origin:USA

...-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized ...

Brand Name:OKY NEWSTAR

Model Number:OKY3481-1

Place of Origin:Guangdong China (Mainland)

50Kg Body Load Cell Sensor Weighing Sensor Resistance strain Half-bridge Description/Specifications Size: 34mmX34mm Internal 1000 Ohm half-bridge strain gauge load cell, range is 50kg, half-bridge structure. When measuring, the correct force is applied to ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NTTFD018N08LC

...Half Bridge Configuration [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT...

Brand Name:Infineon Technologies

Model Number:IR2111

... DRVR HALF-BRIDGE 8DIP Infineon Technologies Product Details Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary...

Brand Name:JUYI

Model Number:JY213H

Place of Origin:China

...speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction...

Brand Name:Littlefuse

Model Number:LF2136BTR

Place of Origin:TAIWAN

..., driving N-channel MOSFETs and IGBTs in a half-bridge configuration. The high voltage process enables the LF2136B high sides to switch up to 600V in a bootstrap operation. LF2136B logic inputs are compatible with ...

Brand Name:onsemi

Model Number:FAN7382MX

Gate Drivers Half Bridge Gate Dvr Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Package / Case: SOP-8 Number...