100v high power transistor

Brand Name:Hua Xuan Yang

Model Number:AP10N10DY

Place of Origin:ShenZhen China

...100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Mosfet Power Transistor Features VDS = 100V,ID = 10A RDS(ON) <160mΩ @ VGS=10V (Typ:140mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:160mΩ) High...

Place of Origin:CN

Brand Name:Original Factory

Model Number:EVAL-7126G-100V-GANC

EVAL-7126G-100V-GANC Embedded Solutions Half-Bridge Evaluation Board With 100V CoolGaN Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:Ti

Model Number:FDPF045N10A

... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been ...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor...

Brand Name:SECORE

Model Number:SC3857

Place of Origin:Shenzhen

... Volts ±10% r/min A ±10% r/min A g.cm W % g.cm A SC3857 100V 13450 0.1 11260 0.54 333 38.5 72.5 2049 2.74 SC3857 230V 11720 0.04 9800 0.185 234 29.9 68.5 1883 1.04 SC3857 100V 5680 0.04 4730 0.2

Brand Name:ON

Model Number:FDA59N30

Place of Origin:Original

... stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Brand Name:Freescale/Motorola

Model Number:MRF173

Place of Origin:USA

...Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 1, Guaranteed Performance at 150 MHz, 28 V: Output Power...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor

Place of Origin:Japan

Brand Name:MITSUBISHI

Model Number:QM10HB-H

...HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Reliable High Power Semiconductor with Extremely Low Reverse Recovery Current *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ...

Brand Name:ANTERWELL

Model Number:2SK2968

Place of Origin:Japan

...HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE) High Speed High Voltage Switch Aplication DC-DC Coverter Relay Drive and Motro Drive Aplication Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power...

Brand Name:VBE

Model Number:VBE09260B2

Place of Origin:CHINA

Model Number:KSE13009I

Place of Origin:Original

Brand Name:Original

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Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...100V 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Categories:High Power MOSFET

Country/Region:china

High Power MOSFET NTMFC013NP10M5L Dual N- & P-Channel SO8FL 100V 13.4mΩ 60A 100V 32mΩ -36 A [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:Infineon Technologies

Model Number:IRF8010PBF

Place of Origin:Mult-origin

...-Source On-Resistance (Vgs=10V) • 3.2V Maximum Gate-Source Threshold Voltage • -55°C to +150°C Operating Temperature Range • High Speed Switching • TO

Brand Name:Diode Triode Transistor

Model Number:TIP137

Place of Origin:USA

...100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...