1 5 v specified high power mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDS4465

High Power MOSFET FDS4465 P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and ...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power...

Brand Name:onsemi

Model Number:FDN304PZ

Place of Origin:original

FDN304PZ MOSFET Power Electronics SOT-23-3 Package P-Channel 1.8V Specified High performance trench technology FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive ...

Model Number:IRFD120

Place of Origin:original factory

...Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power...

Brand Name:JUYI

Place of Origin:China

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high...

Brand Name:Hua Xuan Yang

Place of Origin:ShenZhen China

Model Number:HXY4266

60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power MOSFET Applications Load Switch for Portable Devices z DC/DC Converter Maximum ratings (at TA=25℃ unless...

Brand Name:UCHI

Model Number:D882

Place of Origin:Dongguan China

SOT-89 D882 Plastic-Encapsulate Transistors Features Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC ...

Brand Name:original

Model Number:SI6926DQ

Place of Origin:Original Manufacturer

...SPECIFIED POWERTRENCH MOSFET Detailed Product Description High Light: power led driver circuit , offline led driver ic Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high...

Brand Name:JUYI

Model Number:JY213H

Place of Origin:China

...High Voltage 3-Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified