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4H High Purity Semi Insulating SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size

Categories SiC Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Price: By Case
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
name: High Purity SiC Wafer
Grade: Dummy Grade
Description: 4H High Purity Silicon Carbide Wafer
Carrier Type: Epi Ready
Diameter: (50.8 ± 0.38) mm
Thickness: (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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    4H High Purity Semi Insulating SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size

    4H High Purity Semi Insulating SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size


    PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.


    Here shows detail specification

    SILICON CARBIDE MATERIAL PROPERTIES

    PolytypeSingle Crystal 4HSingle Crystal 6H
    Lattice Parametersa=3.076 Åa=3.073 Å
    c=10.053 Åc=15.117 Å
    Stacking SequenceABCBABCACB
    Band-gap3.26 eV3.03 eV
    Density3.21 · 103 kg/m33.21 · 103 kg/m3
    Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
    Refraction Indexno = 2.719no = 2.707
    ne = 2.777ne = 2.755
    Dielectric Constant9.69.66
    Thermal Conductivity490 W/mK490 W/mK
    Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
    Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
    Electron Mobility800 cm2/V·S400 cm2/V·S
    hole Mobility115 cm2/V·S90 cm2/V·S
    Mohs Hardness~9~9

    4H High Purity Semi Insulating Silicon Carbide Wafer, Dummy Grade,Epi Ready,2”Size


    SUBSTRATE PROPERTYS4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
    DescriptionDummy Grade 4H SEMI Substrate
    Polytype4H
    Diameter(50.8 ± 0.38) mm
    Thickness(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
    Resistivity (RT)>1E5 Ω·cm
    Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
    FWHM<50 arcsec
    Micropipe DensityA+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
    Surface Orientation
    On axis <0001>± 0.5°
    Off axis 3.5° toward <11-20>± 0.5°
    Primary flat orientationParallel {1-100} ± 5°
    Primary flat length16.00 ± 1.70 mm
    Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
    C-face:90° ccw. from orientation flat ± 5°
    Secondary flat length8.00 ± 1.70 mm
    Surface FinishSingle or double face polished
    PackagingSingle wafer box or multi wafer box
    Usable area≥ 90 %
    Edge exclusion1 mm

    SiC crystal application

    Many researchers know the general SiCapplication:III-V Nitride Deposition;OptoelectronicDevices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations.

    Detail Application of Silicon Carbide

    Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

    Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations:

    1. SiC substrate for X-ray monochromators:such as,using SiC's large d-spacing of about 15 A;

    2. SiC substrate for high voltage devices;

    3. SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition;

    4. For silicon carbide p-n diode;

    5. SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm.

    6. SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important:
    1) Semi-insulating type required to prevent free carrier absorption of the laser light;

    2) Double side polished are preferred;

    3) Surface roughness: < 2nm, so that the surface is enough flat for bonding;

    7. SiC substrate for THz system application: Normally it require THz transparency

    8. SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available, surface side on C-face or Si face are both available.

    9. SiC substrate for process development loke ginding, dicing and etc

    10. SiC substrate for fast photo-electric switch

    11. SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned.

    12. SiC substrate for laser: optical, surface and stranparence are concerned.

    13. SiC substrate for III-V epitaxy, normally off axis substrate are required.

    Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, he can give researchers suggestions in different application.


    SiC Crystallography

    Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While there are over 100 known polytypes of SiC, only a few are commonly grown in a reproducible form acceptable for use as an electronic semiconductor. The most common polytypes of SiC presently being developed for electronics are 3C-SiC, 4H-SiC, and 6H-SiC. The atomic crystal structure of the two most common polytypes is shown in the schematic cross section in Figure. As discussed much more thoroughly in References 9 and 10, the different polytypes of SiC are actually composed of different stacking sequences of Si–C bilayers (also called Si–C double layers), where each single Si–C bilayer is denoted by the dotted boxes in Figure. Each atom within a bilayer has three covalent chemical bonds with other atoms in the same (its own) bilayer, and only one bond to an atom in an adjacent bilayer. Figure 5.1a shows the bilayer of the stacking sequence of 4H-SiC polytype, which requires four Si–C bilayers to define the unit cell repeat distance along the c-axis stacking direction (denoted by <0 0 0 1> Miller indices). Similarly,the 6H-SiC polytype repeats its stacking sequence every six bilayers throughout the crystal along the stacking direction.The direction depicted in Figure is often referred to as one of (along with ) the a-axis directions. SiC is a polar semiconductor across the c-axis, in that one surface normal to the c-axis is terminated with silicon atoms while the opposite normal c-axis surface is terminated with carbon atoms. As shown, these surfaces are typically referred to as “silicon face” and “carbon face” surfaces, respectively. Atoms along the left-or right-side edge of Figure would reside on “a-face” crystal surface plane normal to the direction. 3C-SiC, also referred to as β-SiC, is the only form of SiC with a cubic crystal lattice structure. The noncubic polytypes of SiC are sometimes ambiguously referred to as α-SiC. 4H-SiC and 6H-SiC are only two of the many possible SiC polytypes with hexagonal crystal structure. Similarly, 15R-SiC is the most common of the many possible SiC polytypes with a rhombohedral crystal structure.

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