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BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: BTA24-600BWRG
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
I² t Value for fusing: 340 A² s
Critical rate of rise of on-state current: 50 A/µs
Peak gate current: 4 A
Average gate power dissipation: 1 W
Storage junction temperature: - 40 to + 150°C
Operating junction temperature: - 40 to + 125°C
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    BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs


    BTA24, BTB24, BTA25

    BTA26, BTB26, T25

    25 A standard and Snubberless™ triacs

    Features

    ■ High current triac

    ■ Low thermal resistance with clip bonding

    ■ High commutation (4 quadrant) or very high commutation (3 quadrant) capability

    ■ BTA series UL1557 certified (File ref: 81734)

    ■ Packages are RoHS (2002/95/EC) compliant


    Applications

    Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.


    The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 VRMS).


    Description

    Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26, BTB26 and T25 triac series is suitable for general purpose mains power AC switching.



    Absolute maximum ratings

    SymbolParameterValueUnit
    IT(RMS)RMS on-state current (full sine wave)TOP3Tc = 105°C25A
    D2PAK / TO-220ABTc = 100°C
    RD91 Ins/ TOP3 Ins.Tc = 100°C
    TO-220AB Ins.Tc = 75°C
    ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25° C)F = 50 Hzt = 20 ms250A
    F = 60 Hzt = 16.7 ms260
    I ² tI ² t Value for fusingtp = 10 ms340A² s
    dI/dt

    Critical rate of rise of on-state current

    IG = 2 x IGT , tr ≤ 100 ns

    F = 120 HzTj = 125°C50A/µs
    VDSM/VRSMNon repetitive surge peak off-state voltagetp = 10 msTj = 25°CVDRM/VRRM + 100V
    IGMPeak gate currenttp = 20 µsTj = 125°C4A
    PG(AV)Average gate power dissipationTj = 125°C1W

    Tstg

    Tj

    Storage junction temperature range

    Operating junction temperature range

    - 40 to + 150

    - 40 to + 125

    °C

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