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DIODE 1N41481N4148 SiliconEpitaxial Planar Fast Switching Diodes with Stable Performance

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    DIODE 1N41481N4148 SiliconEpitaxial Planar Fast Switching Diodes with Stable Performance

    Country of Origin:

    • China (mainland)

    Key Specifications/Special Features:

    • Silicon epitaxial planar diode
    • Fast switching diode
    • Mechanical data
      • Case: DO-35 glass case
      • Weight: approx 0.13g
      • Packing codes/options: 100K/box
    • Maximum ratings and thermal characteristics
      • Parameter: reverse voltage
        Symbol: VR
        Limit: 75V
      • Parameter: peak reverse voltage
        Symbol: VRM
        Limit: 100V
      • Parameter: surge forward current at t<1s and Tj=25degrees Celsius
        Symbol: IFSM
        Limit: 500mA
      • Parameter: junction temperature
        Symbol: Tj
        Limit: 175 degrees Celsius
      • Parameter: storage temperature
        Symbol: TS
        Limit: -65 to 175 degrees Celsius
      • Paramter: thermal-resistance junction to ambient air
        Symbol: RQJA
        Limit: 350 degrees Celsius/W
    • Parameter:Average rectified current half wave rectification withresistive load at Tamb=25 degrees Celsius
    • Symbol: IF(AV)
      Limit:150mA
    • OEM/ODM are welcome

    Primary Competitive Advantages:

    • Experienced Technical Staff
    • Electronic Link
    • Product Performance
    • Prompt Delivery
    • Competitive
    • Stock In Hand
    Quality DIODE 1N41481N4148 SiliconEpitaxial Planar Fast Switching Diodes with Stable Performance wholesale
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